- I reviewed the specifications of gate driver MPQ1918 and written under topic of Bootstrap (BST) Clamping that in addition to new charging logic, there is also a clamp mechanism, as I quoted here from the datasheet on this subject :Bootstrap (BST) Clamping:" In addition, the electrostatic discharge (ESD) between BST and SW also clamps VBST-SW such that it does not exceed 6V".
My question is if in addition to new charging logic only when PWML = 1 **also a voltage clamping mechanism that prevents the voltage between BST and SW from rising more than 6 V above?**What is meant by “electrostatic discharge (ESD)”, and how long does the additional mechanism (clamp) operate?
- Could you recommend an additional gate driver to MPQ1918 with 2 pwm inputs to switch a GaN FET half-bridge that comes in a non-BGA package?
- External diode is required between VCC and the BST input? If yes, so what the cause? I am asking because in the MPQ1918 datasheet, the application example shows an external diode being used.
- Is there a response time for the UVLO = Under-Voltage Lockout mechanism for both VCC and VBST?